Material Characteristics:
Pressureless sintered silicon carbide (S-SiC) is made of high-purity silicon carbide (SiC) micropowder as raw material. After forming by dry pressing, slip casting or isostatic pressing, densification sintering is conducted in a high-temperature furnace under atmospheric pressure and inert gas protection at a sintering temperature of about 2100-2200℃. This process can produce high-performance ceramics with a theoretical density of over 98%, uniform microstructure and no free silicon residue. The product features extremely high hardness, excellent corrosion resistance, oxidation resistance and wear resistance, and is widely used in industrial kilns, electronic materials, semiconductors and other industries.
Product Information:
pressureless sintered silicon carbide (S-SiC) carrier discs are fabricated by cold isostatic pressing combined with high-temperature pressureless sintering technology, ensuring uniform radial and axial density, high end-face parallelism and excellent flatness of the disc body. The product boasts outstanding features of no warping, no creep and high thermal shock stability under long-term high-temperature service and heavy-load stacking conditions, making it an ideal firing-bearing and isolation platform in high-temperature sintering processes.
Performance Parameters:
Bulk density ≥ 3.10 g/cm³, apparent porosity ＜ 0.1%, cold bending strength ≥ 400 MPa, maximum service temperature 1650℃.
Product Dimensions:
Conventional S-SiC carrier discs have a diameter ranging from 150mm to 500mm and a thickness ranging from 5mm to 30mm. Secondary processing technologies are available, including double-end face precision grinding, outer circle finishing, positioning counterboring, vent hole array processing, edge grooving and special-shaped contour cutting. Yuko Corporation can also provide customization according to customers' specific drawings and requirements for special outer diameters and step thicknesses.
Product Applications:
S-SiC carrier discs are widely used as wafer boat support trays in semiconductor wafer heat treatment furnaces, stacking partitions in powder metallurgy and MIM debinding sintering furnaces, firing-bearing pallets in electronic ceramic binder removal and sintering processes, heat insulation bearing platforms in high-temperature vacuum furnaces, and precision carriers for LED substrate and advanced ceramic substrate firing, serving as core firing-bearing and tooling components under high-temperature, heavy-load and high-flatness requirements.